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Yield enhancement using source/drain BF2+ implant process optimization

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10 Author(s)
Tuung Luoh ; Technol. Dev. Center, Macronix Int. Co., Ltd., Hsinchu, Taiwan ; Sheng-Hui Hsieh ; Chen-Ling Lee ; Hong Ji Lee
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This investigation employs an optimized method to alleviate defects occurring at BF2+ implanted source/drain areas, some white spots defects found at scribes lines after BPSG (boron and phosphorus doped silicon glass) anneal. The results of physical failure analysis indicate the white spot defects are relative to outgassed fluorine that can't be released out during BPSG thermal annealing. Various approaches which includes changing the stress of post cap layer, lowering down the BF2+ implant doping concentration, and optimizing the ramp-up speed of post-annealing are all able to alleviate the generation of white spot defects. The optimized process with an additional RTP (rapid thermal annealing) right after BF2+ implantation delivers 7% yield improvement.

Published in:

Advanced Semiconductor Manufacturing Conference (ASMC), 2010 IEEE/SEMI

Date of Conference:

11-13 July 2010