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Improved Performance of 1.3-μm Multilayer P-Doped InAs/InGaAs Quantum Dot Lasers Using Rapid Thermal Annealing

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5 Author(s)
Cao, Q.Q. ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore ; Tong, C.Z. ; Yoon, S.F. ; Liu, C.Y.
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Significant improvements in the performance of p-doped ten-layer InAs/InGaAs quantum dot laser are demonstrated using rapid thermal annealing at 600 °C. The annealed laser shows about 2.7 times increase in the saturated output power and external differential quantum efficiency without obvious wavelength shift. Decrease in internal loss of 2.9 cm-1 and improvement in the threshold current by 23% are achieved. Defect reduction is thought to be the most likely mechanism contributing to the improved performance according to the electroluminescence and improved characteristic temperature behavior.

Published in:

Nanotechnology, IEEE Transactions on  (Volume:11 ,  Issue: 2 )

Date of Publication:

March 2012

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