Referenced Items are not available for this document.
A new i-In0.49Ga0.51P-InxGa1-x As/i-GaAs step-compositioned doped-channel field-effect transistor (SCDCFET) has been fabricated and studied. Owing to the presence of a V-shaped energy band formed by the step-compositioned doped-channel structure, a large current density, a large gate voltage swing with high average transconductance and a high breakdown voltage are obtained. For a 1×80 μm2 gate dimension, a maximum drain saturation current of 830 mA/mm, a maximum transconductance of 188 mS/mm, a high gate breakdown voltage of 34 V, and a large gate voltage swing of 3.3 V with transconductance >150 mS/mm are achieved. These performances show that the studied device has a good potentiality for high-speed, high-power, and large input signal circuit applications
Published in:
Electronics Letters
(Volume:33
,
Issue:
1
)
Date of Publication: 2 Jan 1997
- Page(s):
- 98 - 99
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 5486552
- Digital Object Identifier :
- 10.1049/el:19970030
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 2 Jan 1997
- Sponsored by :
- Institution of Engineering and Technology
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