Mixed-Mode Simulation of Bit-Flip With Pulsed Laser

This paper shows an adaptation of the Sentaurus TCAD suite to pulsed laser SEE simulation. After the literature review, we present the model of the target transistor, calibrated against the HSPICE model of the foundry. The target model is used to evaluate the Linear Energy Transfer threshold for bit-flip in a simulated flip-flop circuit using the heavy-ion simulation tools of Sentaurus TCAD. Those simulations help us to make an adaptation of Sentaurus TCAD physical model for simulation of pulsed laser experiments. The pulsed laser simulation results are compared with a pulsed laser experiment, showing that the proposed model achieves more accuracy than previous models referred to in the literature.