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A Deep Level Transient Spectroscopy Study of Electron and Proton Irradiated {\hbox {p}} ^{+} {\hbox {n}} GaAs Diodes

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6 Author(s)
Warner, J.H. ; Naval Res. Lab., Washington, DC, USA ; Cress, C.D. ; Messenger, S.R. ; Walters, R.J.
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Defects produced by 0.6 MeV, 1 MeV and 5 MeV electrons are compared with those produced by 2 MeV proton irradiations in p + n GaAs diodes using Deep Level Transient Spectroscopy (DLTS). Following 0.6 and 1 MeV electron irradiation, the measured DLTS spectra matched that of the literature. After 5 MeV electron irradiation, however, a new DLTS peak was observed. The new peak is located on the low temperature side of the common E3 peak. This new electron-induced DLTS peak is assigned to be the same peak produced by proton irradiation and commonly labeled PR4'' . Further analysis of the DLTS data indicate that the PR4'' peak is independent of the displacement damage dose deposited but is dependent on the primary recoil energy.

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Nuclear Science, IEEE Transactions on  (Volume:57 ,  Issue: 4 )