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Collected Charge Analysis for a New Transient Model by TCAD Simulation in 90 nm Technology

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4 Author(s)
Artola, L. ; ONERA, Toulouse, France ; Hubert, G. ; Duzellier, S. ; Bezerra, F.

TCAD simulations of a 90 nm CMOS bulk technology have been performed to investigate how technologies parameters impact on the collection charge leading to Single Event Effects. This work proposes an improved diffusion collection model.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:57 ,  Issue: 4 )