Total Dose Effects on a FD-SOI Technology for Monolithic Pixel Sensors

Monolithic pixel detectors in deep-submicron Fully Depleted (FD) Silicon On Insulator (SOI) technology have been developed and characterized. This summary presents the first assessments of the total dose effect from ionizing radiation performed on such detectors. This work, performed on single transistor test structures, shows how the substrate bias condition during irradiation plays a dramatic role on the resulting radiation damage.