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Physical Evidence Supporting the Electrical Signature of SEGR on Thin Vertical Oxides

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3 Author(s)
Lawrence, R.K. ; BAE Syst., Manassas, VA, USA ; Zimmerman, J.A. ; Ross, J.F.

Analysis techniques on a 90 nm deep trench capacitor have provided the physical evidence for a heavy ion induced single event gate rupture (SEGR). The trench capacitor is from a 90 nm bulk complementary metal oxide semiconductor technology and is used for the reduction of single event upsets. SEGR damaged trench oxides are identified via a voltage contrast technique using a focused ion beam. The focused ion beam was used to delayer and expose the deep trenches. A wet chemical etch was used to identify the location of the SEGR leakage path. The oxide rupture location was observed at the top of the deep trench capacitor.

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Nuclear Science, IEEE Transactions on  (Volume:57 ,  Issue: 4 )