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Amorphous silicon thin-film transistor gate driver circuit design optimization using a simulation-based evolutionary technique

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8 Author(s)
Ying-Ju Chiu ; Dept. of Transp. Technol. & Manage., Nat. Chiao-Tung Univ., Hsinchu, Taiwan ; Kuo-Fu Lee ; Ying-Chieh Chen ; Hui-Wen Cheng
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In this work, we for the first time optimize dynamic characteristic of amorphous silicon thin-film transistor (TFT) gate (ASG) driver circuits for TFT-LCD panel. The rise time, fall time, power dissipation, and ripple voltage of the ASG driver circuit are optimized using simulation-based evolutionary method which integrates genetic algorithm and circuit simulation on the unified optimization framework. Two different a-Si:H TFT ASG driver circuits are optimized, the first circuit consisting of 14 a-Si:H TFT devices is designed for the specification of the rise time <; 1.5 μs, the fall time <; 1.5 μs and the ripple voltage <; 3 V with the minimization of total layout area. The second one with 8 a-Si:H TFTs is further optimized with the power dissipation <; 2 mW. The results of this study successfully met the desired specification; consequently, it benefits manufacturing of TFT-LCD panel.

Published in:

Semiconductor Electronics (ICSE), 2010 IEEE International Conference on

Date of Conference:

28-30 June 2010