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A comparative study of temperature sensitivity of 1.3-µm In(Ga)AsP/InGaAsP multiple quantum-well vertical-cavity surface-emitting diode lasers

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1 Author(s)
Piskorski, Ł. ; Lab. of Comput. Phys., Tech. Univ. of Lodz, Łódz, Poland

A comprehensive fully self-consistent optical-electrical-thermal-recombination model of the 1.3-μm In(Ga)AsP/InGaAsP vertical-cavity surface-emitting diode lasers (VCSELs) is used to determine their continuous-wave (CW) performance characteristics. As expected, for the InGaAsP/InGaAsP devices with both dielectric mirrors, maximal ambient temperature for which it is possible to achieve threshold operation is only slightly higher than room temperature (RT). However, using GaAs-based bottom mirror and optional gain medium consisting of InAsP/InGaAsP strain-compensated multiple quantum wells (SCMQWs) allows to achieve continuous-wave operation for ambient temperatures higher than 340 K. Therefore, the 1.3-μm InAsP/InGaAsP MQW VCSELs have been found to offer a very promising CW performance as sources of carrier radiation for the optical communication taking advantage of glass fibres.

Published in:

Transparent Optical Networks (ICTON), 2010 12th International Conference on

Date of Conference:

June 27 2010-July 1 2010

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