Scheduled System Maintenance:
On May 6th, single article purchases and IEEE account management will be unavailable from 8:00 AM - 5:00 PM ET (12:00 - 21:00 UTC). We apologize for the inconvenience.
By Topic

Two-state passive mode-locking of quantum dot semiconductor lasers: Classical state scenario and novel reverse state dynamics

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Breuer, S. ; Tech. Univ. Darmstadt, Darmstadt, Germany ; Rossetti, M. ; Elsasser, W. ; Drzewietzki, L.
more authors

We present both experimental and theoretical investigations of the so-called reverse emission state dynamics in a two-section InAs/InGaAs Quantum Dot (QD) laser. In contrast to the classical state scenario, we demonstrate by properly designing the laser cavity and the QD active region, a reversal of the emission state transition: At a certain gain current Excited-state (ES) lasing and mode-locking (ML) starts first and then, with increasing gain current, a transition to simultaneous ES and ground-state (GS) ML takes place. This enables a novel approach to wavelength-switching of the mode-locked pulses over a range of 63 nm: the realization of a two-section QD laser with a resistor Self-Electro-optic Effect Device (SEED) configuration. These results are reviewed together with the state-of-the-art realization of InAs/InGaAs two-section QD lasers operating in two-state ML regime.

Published in:

Transparent Optical Networks (ICTON), 2010 12th International Conference on

Date of Conference:

June 27 2010-July 1 2010