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The behavior of a frequency divider circuit using a Λ-type negative differential resistance (NDR) circuit, which is composed of Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT) devices, is studied. This frequency divider is mainly made of a MOS-HBT-NDR circuit, an inductor, and a capacitor. The operation is based on the long-period behavior of the NDR-based chaos circuit. We demonstrate the high-frequency consideration and characteristic of this frequency divider. The results show that the dividing ratio can be selected by modulating the input signal frequency.