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Frequency divider design using the Λ-type negative-differential-resistance circuit

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3 Author(s)
Dong-Shong Liang ; Dept. of Electron. Eng., Kun Shan Univ., Tainan, Taiwan ; Kwang-Jow Gan ; Kuan-Yu Chun

The behavior of a frequency divider circuit using a Λ-type negative differential resistance (NDR) circuit, which is composed of Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT) devices, is studied. This frequency divider is mainly made of a MOS-HBT-NDR circuit, an inductor, and a capacitor. The operation is based on the long-period behavior of the NDR-based chaos circuit. We demonstrate the high-frequency consideration and characteristic of this frequency divider. The results show that the dividing ratio can be selected by modulating the input signal frequency.

Published in:

Circuits and Systems (MWSCAS), 2010 53rd IEEE International Midwest Symposium on

Date of Conference:

1-4 Aug. 2010