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Millimeter-wave BiST and BiSC using a high-definition sub-ranged detector in 90nm CMOS

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4 Author(s)
Sleiman Bou Sleiman ; Analog VLSI Lab, ECE Department, The Ohio State University, Columbus, USA ; Amneh Akour ; Waleed Khalil ; Mohammed Ismail

A wideband CMOS mm-Wave amplitude detector for on-chip self-test and calibration is presented. The high-conversion-gain detector enables accurate on-chip amplitude measurements and allows for the prediction of key RF parameters. The detector operates across the 60 GHz band and achieves a dynamic range of 0-0.5 V and a sensitivity of -9 V/V. The detector's practical use in mm-wave Built-in-Self-Test (BiST) and Built-in-Self-Calibration (BiSC) circuits is demonstrated using a 60 GHz CMOS LNA. Simulation results show that the LNA gain, compression point, and intermodulation distortion are predicted with minimal error. The detector and LNA are built in IBM's 90 nm CMOS technology.

Published in:

2010 53rd IEEE International Midwest Symposium on Circuits and Systems

Date of Conference:

1-4 Aug. 2010