Referenced Items are not available for this document.
We present a low-power CMOS charge preamplifier, suitable for use with silicon detectors having a medium value of capacitance. Noise considerations and a long decay time of the output signal command the use of unusually large devices such as an input transistor having W=10000 μm and a 7-MΩ feedback resistor. Both of these devices were integrated inside the chip. We present and compare theoretical predictions together with the results of post-layout simulation and the measurements obtained
Published in:
Nuclear Science, IEEE Transactions on
(Volume:44
,
Issue:
1
)
Date of Publication: Feb 1997
- Page(s):
- 31 - 35
- ISSN :
- 0018-9499
- INSPEC Accession Number:
- 5509960
- Digital Object Identifier :
- 10.1109/23.554820
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Feb 1997
- Sponsored by :
- IEEE Nuclear and Plasma Sciences Society
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