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A four-channel, low-power CMOS charge preamplifier for silicon detectors with medium value of capacitance

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6 Author(s)
Randazzo, N. ; Dipartimento di Fisica, Catania Univ., Italy ; Russo, G.V. ; Lo Presti, D. ; Panebianco, S.
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We present a low-power CMOS charge preamplifier, suitable for use with silicon detectors having a medium value of capacitance. Noise considerations and a long decay time of the output signal command the use of unusually large devices such as an input transistor having W=10000 μm and a 7-MΩ feedback resistor. Both of these devices were integrated inside the chip. We present and compare theoretical predictions together with the results of post-layout simulation and the measurements obtained

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Nuclear Science, IEEE Transactions on  (Volume:44 ,  Issue: 1 )