By Topic

Pixel X-ray detectors in epitaxial gallium arsenide with high-energy resolution capabilities (Fano factor experimental determination)

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Bertuccio, G. ; Dipartimento di Elettronica e Inf., Politecnico di Milano, Italy ; Pullia, A. ; Lauter, J. ; Forster, A.
more authors

Gallium Arsenide pixel detectors with an area of 170×320 μm2 and thickness of 5 μm, realized by molecular beam epitaxy, have been designed and tested with X- and γ rays. No significant charge trapping effects have been observed, and a charge collection efficiency of 100% has been measured. At room temperature an energy resolution of 671 eV full width at half maximum (FWHM) at 59.54 keV has been obtained, with an electronic noise of 532 eV FWHM. With the detector cooled to 243 K, the electronic noise is reduced to 373 eV FWHM, and the Kα and Kβ lines of the 55Fe spectrum can be resolved. The Fano factor for GaAs has been measured at room temperature with 59.5 keV photons yielding F=0.12±0.01

Published in:

Nuclear Science, IEEE Transactions on  (Volume:44 ,  Issue: 1 )