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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:44 Issue:1 Help

15-μm 128×128 GaAs/AlxGa1-xAs quantum well infrared photodetector focal plane array camera

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9 Author(s)
Gunapala, S.D. ; Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA ; Park, J.S. ; Sarusi, G. ; True-Lon Lin
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In this paper, we discuss the development of very sensitive, very long wavelength infrared GaAs/AlxGa1-xAs quantum well infrared photodetectors (QWIPs) based on bound-to-quasi-bound intersubband transition, fabrication of random reflectors for efficient light coupling, and the demonstration of a 15-μm cutoff 128×128 focal plane array imaging camera. Excellent imagery, with a noise equivalent differential temperature (NEΔT) of 30 mK has been achieved

Published in:
Electron Devices, IEEE Transactions on  (Volume:44 ,  Issue: 1 )

Date of Publication: Jan 1997

Page(s):
45 - 50
ISSN :
0018-9383
INSPEC Accession Number:
5475282
Digital Object Identifier :
10.1109/16.554790
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Jan 1997
Sponsored by :
IEEE Electron Devices Society

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