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Boosting Green GaInN/GaN Light-Emitting Diode Performance by a GaInN Underlying Layer

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6 Author(s)
Yong Xia ; Future Chips Constellation and the Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, USA ; Wenting Hou ; Liang Zhao ; Mingwei Zhu
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The light output of 530 nm green GalnN/GaN light-emitting diodes on sapphire has been nearly doubled by the insertion of a 130-nm GalnN underlayer (UL) between the n-GaN electron injection layer and the quantum-well (QW) active region. Under variation of the alloy composition, best results were obtained for an x = 6.3% Ga1-xInxN UL. By low-temperature depth-resolved cathodoluminescence spectroscopy, an interplay of the impurity-related donor-acceptor pair recombination, the UL, and the QW emission has been observed. We propose that the resonance and level alignments between the defect and UL levels reroute excitation toward radiative recombination in the QWs.

Published in:

IEEE Transactions on Electron Devices  (Volume:57 ,  Issue: 10 )