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The random telegraph noise in the gate-induced drain leakage (GIDL) and channel currents of nanoscale high-k nMOSFETs was analyzed and compared systematically. The capture and emission probabilities of the carriers were analyzed in terms of the gate voltage and the temperature. Both emission time (τe) and capture time (τc) in the channel current have a dependence on VGS. However, τe in the GIDL current is independent of VGS but strongly dependent on the temperature since τe is decreased more significantly with increasing temperature than τc. As VGS increases, τc in the GIDL current increases.