By Topic

Pulsed measurements and modeling for electro-thermal effects

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Schaefer, B. ; Hewlett-Packard Co., Santa Rosa, CA, USA ; Dunn, M.

This paper presents a system and measurement methodology for generating a complete nonlinear model for bipolar junction transistors including static and dynamic thermal dependence. System configuration, measurement, and calibration issues am presented. The modeling process involves pulse mode DC and AC measurements from which isothermal measurements and subsequently isothermal parameters can be extracted. Using a combination of static and pulse mode measurements the device's dynamic temperature dependence can be explicitly determined and coupled back into the model via a self-consistent nonlinear electro-thermal model

Published in:

Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996

Date of Conference:

29 Sep-1 Oct 1996