Pulsed measurements and modeling for electro-thermal effects

This paper presents a system and measurement methodology for generating a complete nonlinear model for bipolar junction transistors including static and dynamic thermal dependence. System configuration, measurement, and calibration issues am presented. The modeling process involves pulse mode DC and AC measurements from which isothermal measurements and subsequently isothermal parameters can be extracted. Using a combination of static and pulse mode measurements the device's dynamic temperature dependence can be explicitly determined and coupled back into the model via a self-consistent nonlinear electro-thermal model.