By Topic

Transport of single-walled carbon nanotube transistors after gamma radiation treatment for high-speed applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
V. A. Sydoruk ; Institute of Bio- und Nanosystems (IBN), Forschungszentrum Jülich, 52425, Germany ; M. V. Petrychuk ; B. A. Danilchenko ; A. Offenhaeusser
more authors

In recent years, considerable attention has been focused on studies on the influence of gamma radiation treatments on the performance of semiconductor materials and devices, which are very important for spacecraft applications. Among the different objects studied, carbon-nanotube-based (CNT) structures are considered promising due to their unique properties. There are a number of publications concerning their microwave applications. For example, a single-electron transistor can be used as a highly sensitive electrometer based on the sequential tunneling of electrons in the Coulomb blockade regime. In this article, the authors reported on their investigation of radio-frequency single-electron transistor (rf-SET) operation of single-walled CNT quantum dots in the strong tunneling regime.

Published in:

Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves (MSMW), 2010 International Kharkov Symposium on

Date of Conference:

21-26 June 2010