By Topic

Self-linearizing technique for L-band HBT power amplifier: effect of source impedance on phase distortion

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Yamada, H. ; Appl. Syst. Lab., Fujitsu Labs. Ltd., Akashi, Japan ; Ohara, S. ; Iwai, T. ; Yamaguchi, Y.
more authors

L-band power amplifiers operating with high efficiency and high linearity at a single and low supply voltage are in strong demand for mobile communication systems. This paper presents a new self-linearizing technique for power heterojunction bipolar transistors (HBTs). Utilizing the nonlinear input conductance of the device itself and setting the source impedance to the self-linearizing impedance, the phase distortion and the adjacent channel leakage power (ACP) for π/4-shift QPSK modulated signal of our InGaP/GaAs power HBTs have been greatly improved. As a result, the HBT exhibited the ACP at 50 kHz offset frequency of -49.2 dBc with a power-added efficiency (PAE) of 56% at an output power (Pout) of 31 dBm under a supply voltage of 35 V

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:44 ,  Issue: 12 )