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Browse Journals & Magazines > Microwave and Wireless Compon ...> Volume:20 Issue:9 Help

A 90 nm CMOS + 11 dBm IIP3 4 mW Dual-Band LNA for Cellular Handsets

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3 Author(s)
Fatin, G.Z. ; Dept. of Electr. & Comput. Eng., Univ. of Tabriz, Tabriz, Iran ; Koozehkanani, Z.D. ; Sjoland, H.

A dual-band cross-coupled common-gate low noise amplifier (LNA) utilizing post distortion cancellation is introduced. A differential pair biased in weak inversion is used to cancel the third-order intermodulation (IMD3) distortion of the main amplifier. An on-chip circuit is used for biasing the main and auxiliary amplifier. The IIP3 of the LNA is improved by more than 4 dB in both bands, located at 1.8 and 2 GHz, respectively. The IIP3 of the amplifier is +11 dBm, the gain is 15 and 16 dB, and the Noise Figure (NF) is 4 and 3.5 dB in the low and high bands, respectively. The LNA is implemented in a 90 nm CMOS process and draws 4 mA from a 1 V supply.

Published in:
Microwave and Wireless Components Letters, IEEE  (Volume:20 ,  Issue: 9 )

Date of Publication: Sept. 2010

Page(s):
513 - 515
ISSN :
1531-1309
INSPEC Accession Number:
11512690
Digital Object Identifier :
10.1109/LMWC.2010.2055839
Product Type:
Journals & Magazines
Date of Publication :
09 August 2010
Date of Current Version :
02 September 2010
Issue Date :
Sept. 2010
Sponsored by :
IEEE Microwave Theory and Techniques Society

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