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A 90 nm CMOS + 11 dBm IIP3 4 mW Dual-Band LNA for Cellular Handsets

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3 Author(s)
Fatin, G.Z. ; Dept. of Electr. & Comput. Eng., Univ. of Tabriz, Tabriz, Iran ; Koozehkanani, Z.D. ; Sjoland, H.

A dual-band cross-coupled common-gate low noise amplifier (LNA) utilizing post distortion cancellation is introduced. A differential pair biased in weak inversion is used to cancel the third-order intermodulation (IMD3) distortion of the main amplifier. An on-chip circuit is used for biasing the main and auxiliary amplifier. The IIP3 of the LNA is improved by more than 4 dB in both bands, located at 1.8 and 2 GHz, respectively. The IIP3 of the amplifier is +11 dBm, the gain is 15 and 16 dB, and the Noise Figure (NF) is 4 and 3.5 dB in the low and high bands, respectively. The LNA is implemented in a 90 nm CMOS process and draws 4 mA from a 1 V supply.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:20 ,  Issue: 9 )