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A High Efficiency Broadband Class-E Power Amplifier Using a Reactance Compensation Technique

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2 Author(s)
Chi-Hsien Lin ; Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan ; Hong-Yeh Chang

This letter presents a high efficiency broadband fully integrated class-E power amplifier (PA) using a 0.5 μm enhancement/depletion-pseudomorphic high-electron mobility transistor (E/D-PHEMT) process. The proposed PA is based on a class-E topology with a reactance compensation technique. To achieve high efficiency and broad bandwidth, the reactance compensation component is employed in the load network of the class-E PA. From 1.5 to 3.8 GHz, this circuit demonstrates a power added efficiency (PAE) of 62% and an output 1 dB compression point (P1 dB) of higher than 27 dBm.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:20 ,  Issue: 9 )