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The goal of this letter is to investigate and characterize the defects at the Al2O3/gate interface in TANOS memory stacks. To this purpose, gate-side trap spectroscopy by charge injection and sensing is applied on devices featuring different metal gates and different postdeposition anneals. The results show that a high concentration of defect is present in crystalline samples with a TaN or TiN gate.
Date of Publication: Oct. 2010