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Hot-Carrier Stress Effect on a CMOS 65-nm 60-GHz One-Stage Power Amplifier

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7 Author(s)
Quemerais, T. ; STMicroelectronics, Crolles, France ; Moquillon, L. ; Huard, V. ; Fournier, J.
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The effects of RF hot-carrier stress on the characteristics of 60-GHz power amplifiers (PAs) on a CMOS 65-nm process are investigated, for the first time, in this letter. A reliability study is made on a one-stage PA to validate an aging model and the degradation explanation. A drop of 16% of the gain, 17% of the 1-dB output compression point (OCP1 dB), and 17% of the Psat are measured at 60 GHz after 50 h of stress under Vdd = 1.65 V with Pin = 0 dBm and Vdd = 1.9 V with Pin = -10 dBm at 60-GHz frequency.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 9 )