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Charge Gain, NBTI, and Random Telegraph Noise in EEPROM Flash Memory Devices

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2 Author(s)
Meir Janai ; Saifun Semiconductors, Ltd., Netanya, Israel ; Ilan Bloom

Different charge-gain (CG) processes are reported in EEPROM nonvolatile Flash memory devices. The process originally characterized in nitride-trapping devices is reexamined. Its mechanism is reinterpreted in terms of the recovery of negative-bias temperature instability (NBTI). We show that this CG process is controlled by nonequilibrium random-telegraph-noise-like mechanism, similar to NBTI recovery in MOS devices.

Published in:

IEEE Electron Device Letters  (Volume:31 ,  Issue: 9 )