Scheduled System Maintenance on May 29th, 2015:
IEEE Xplore will be upgraded between 11:00 AM and 10:00 PM EDT. During this time there may be intermittent impact on performance. For technical support, please contact us at onlinesupport@ieee.org. We apologize for any inconvenience.
By Topic

Molecular dynamics analysis of reflow process of sputtered aluminum films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Saito, Y. ; Mech. Eng. Res. Lab., Hitachi Ltd., Tokyo, Japan ; Hirasawa, S. ; Saito, T. ; Nezu, H.
more authors

It is important that aluminum films fill the grooves on silicon substrates if high-density devices are to be produced. In this paper, we calculate the changes in the free-surface profiles of deposited aluminum films in a high-temperature reflow process on flat and grooved substrates using a molecular dynamics simulation. We use an atomic-scale model to analyze the micron-scale flow on the substrates. The relationships between droplet formation and the parameters of initial film-thickness distribution, aluminum film temperature, and bond energy between the aluminum and substrate atoms are also investigated. When the film at the bottom of the groove walls is thick, film breaks are observed at the top of the groove walls and a large volume of the film flows into the bottom of the groove. We also calculate the change in the aluminum-film profiles for a high-temperature sputtering deposition process

Published in:

Semiconductor Manufacturing, IEEE Transactions on  (Volume:10 ,  Issue: 1 )