Performance evaluation of all SiC power converters for realizing high power density of 50 W/cm3

In high-power density power converter designs, power losses of power devices are essential design parameters because they determines the volume of cooling systems. The power loss of a SiC power module using a SiC Implantation and Epitaxial MOSFET (SiC-IEMOSFET) has been evaluated in the junction temperature range from 150°C to 250°C and the current density range from 100 A/cm
²
to 250 A/cm
²
. By using the power loss data, design criteria of the junction temperature and current density of the SiC-IEMOSFET to realize the power density of 50W/cm
³
have been extracted.