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Performance evaluation of all SiC power converters for realizing high power density of 50 W/cm3

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4 Author(s)
Takao, K. ; Corporative R&D Center, Toshiba Corp., Kawasaki, Japan ; Harada, S. ; Shinohe, T. ; Ohashi, H.

In high-power density power converter designs, power losses of power devices are essential design parameters because they determines the volume of cooling systems. The power loss of a SiC power module using a SiC Implantation and Epitaxial MOSFET (SiC-IEMOSFET) has been evaluated in the junction temperature range from 150°C to 250°C and the current density range from 100 A/cm2 to 250 A/cm2. By using the power loss data, design criteria of the junction temperature and current density of the SiC-IEMOSFET to realize the power density of 50W/cm3 have been extracted.

Published in:

Power Electronics Conference (IPEC), 2010 International

Date of Conference:

21-24 June 2010