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Operation of a silicon CMOS electron pump

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8 Author(s)
Pierre, M. ; INAC, Commissariat a l''energie atomique, Grenoble, France ; Roche, B. ; Jehl, X. ; Wacquez, R.
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We show the first measurements of a silicon electron pump produced in an industrial CMOS facility. Sample fabrication derived from state-of-the-art microelectronics processes results in mass production with high yield, very small sizes and easy operation up to high frequencies as these pump do not suffer from cross-capacitance. Further data with metrological assessment will be shown, as well as a a comparison of classical and non-adiabatic pumping modes within the same devices.

Published in:

Precision Electromagnetic Measurements (CPEM), 2010 Conference on

Date of Conference:

13-18 June 2010