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Laterally-coupled distributed feedback InGaSb/GaSb diode lasers fabricated by nanoimprint lithography

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10 Author(s)
Haring, K. ; Optoelectron. Res. Centre, Tampere Univ. of Technol., Tampere, Finland ; Viheriälä, J. ; Viljanen, M.-R. ; Paajaste, J.
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The development of GaSb-based laterally-coupled distributed feedback diode lasers by means of cost-effective nanoimprint lithography process is presented. The separate confinement laser gain structure comprised two In0.2GaSb quantum wells. A grating pattern was defined and etched on the sides of the laser diode waveguide to enable distributed feedback. At room temperature the lasers emitted ~2mW output power in a single longitudinal mode at ~1945nm and exhibited a sidemode suppression ratio of over 30dB. A temperature dependent wavelength tuning coefficient of 0.16nm/°C was measured for the laser output.

Published in:

Electronics Letters  (Volume:46 ,  Issue: 16 )