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30-GHz bandwidth 1.55-μm strain-compensated InGaAlAs-InGaAsP MQW laser

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5 Author(s)
Matsui, Y. ; Femtosecond Technol. Res. Assoc., Ibaraki, Japan ; Murai, H. ; Arahira, S. ; Kutsuzawa, S.
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High-speed 1.55 μm laser diodes with a 3-dB modulation bandwidths of 30 GHz were fabricated by using short-cavity mushroom structures with undoped, strain-compensated InGaAlAs-InGaAsP twenty-quantum-well active regions. The bandwidths were achieved at low bias current of 100 mA. The laser exhibited a high differential gain of 1.54×10/sup -15/ cm2 and a small K factor of 0.135 ns. These results were achieved by using an In/sub 0.386/Ga/sub 0.465/AlAs barrier with 0.83% tensile strain to reduce the thermal emission time of holes from wells and hence the hole transport time.

Published in:

Photonics Technology Letters, IEEE  (Volume:9 ,  Issue: 1 )