Fabrication and characterization of a current-injected InGaAs-GaAs quantum-wire gain-coupled distributed feedback (DFB) laser operating at 77 K at a wavelength of 923 nm are presented. Threshold current densities in broad area lasers were measured to be as low as 160 A/cm/sup 2/. The side-mode suppression ratio at twice threshold is 35 dB. A 4-/spl mu/m rib waveguide device has a threshold of 14 mA. The patterning process for the second-order DFB grating fabricated with deep UV holography and wet-chemical etching is described.
Published in:
Photonics Technology Letters, IEEE
(Volume:9
,
Issue:
1
)
Date of Publication: Jan. 1997