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Distributed feedback gain-coupled lasers based on InGaAs quantum-wire arrays

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13 Author(s)
J. Robadey ; Inst. de Micro- et Optoelectron., Ecole Polytech. Federale de Lausanne, Switzerland ; U. Marti ; R. O. Miles ; M. Glick
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Fabrication and characterization of a current-injected InGaAs-GaAs quantum-wire gain-coupled distributed feedback (DFB) laser operating at 77 K at a wavelength of 923 nm are presented. Threshold current densities in broad area lasers were measured to be as low as 160 A/cm2. The side-mode suppression ratio at twice threshold is 35 dB. A 4-μm rib waveguide device has a threshold of 14 mA. The patterning process for the second-order DFB grating fabricated with deep UV holography and wet-chemical etching is described.

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IEEE Photonics Technology Letters  (Volume:9 ,  Issue: 1 )