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Analytical models for transient diffusion and activation of ion-implanted boron during rapid thermal annealing considering ramp-up period

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8 Author(s)
Suzuki, K. ; Fujitsu Labs. Ltd., Japan ; Aoki, M. ; Kataoka, Y. ; Sasaki, N.
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Analyzing experimental boron transient diffusion profiles in Si MOSFETs over a wide temperature range with the process simulator TESIM, we evaluated the related transient diffusion time t/sub E/, enhanced diffusivity D/sub enh/, and maximum transient diffusion concentration C/sub enh/. Our extracted values contradict previously reported values, but it is due to the fact that the former works neglected the ramp-up period. We show that considering the ramp-up period is indispensable for the analysis of transient diffusion. We also developed analytical models for t/sub E/, D/sub enh/, and C/sub enh/, and clarified their dependence on physical parameters implemented in TESIM.

Published in:

Electron Devices Meeting, 1996. IEDM '96., International

Date of Conference:

8-11 Dec. 1996