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Modeling of boron, phosphorus, and arsenic implants into single-crystal silicon over a wide energy range (few keV to several MeV)

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4 Author(s)
S. J. Morris ; Microelectron. Res. Center, Texas Univ., Austin, TX, USA ; B. Obradovic ; S. -H. Yang ; A. F. Tasch

In this paper is presented for the first time an accurate, physically based simulator for boron, arsenic, and phosphorus ion implantation covering a very wide range of energies from a few keV to several MeV. This wide range of energies, as well as on-axis and off-axis implantations, is covered by a single, comprehensive model. Combined with previously developed models for damage accumulation, this model allows physically-based simulation of 3-D profiles over an extremely wide range of implant conditions.

Published in:

Electron Devices Meeting, 1996. IEDM '96., International

Date of Conference:

8-11 Dec. 1996