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A scalable high frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design

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5 Author(s)
Voinigescu, S.P. ; Nortel Technol., Northern Telecom, Ottawa, Ont., Canada ; Maliepaard, M.C. ; Schroter, M. ; Schvan, P.
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Fully scalable, analytical HF noise parameter equations for bipolar transistors are presented and experimentally tested on high speed Si and SiGe technologies. A technique for extracting the complete set of transistor noise parameters from Y parameter measurements only is developed and verified. Finally, the usefulness of the noise model is demonstrated in the design of tuned LNAs in the 1.9 GHz, 2.4 GHz, and 5.8 GHz bands

Published in:

Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996

Date of Conference:

29 Sep-1 Oct 1996