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A new physical, quasi 3-D, compact model of lateral bipolar transistors for circuit simulation

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2 Author(s)
Freund, D. ; Braun AG, Kronberg, Germany ; Kostka, A.

A new, physics-based compact model for lateral bipolar transistors with quasi-three-dimensional, analytical equations for DC-operation is presented. It covers major features of the device operation which up to now have not been included in any usual model

Published in:

Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996

Date of Conference:

29 Sep-1 Oct 1996