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Frequency response of an internal amplifier in a high-speed integrated circuit measured by electro-optic sampling

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1 Author(s)
Wiesenfeld, J.M. ; Crawford Hill Lab., AT&T Bell Labs., Holmdel, NJ

The frequency response of an FET amplifier within a high-speed GaAs integrated circuit has been measured directly using ultrashort optical pulses from a gain-switched GaInAsP injection laser and the electro-optic sampling technique. The 3 dB bandwidth for the FET amplifier is 4-4.5 GHz

Published in:

Electronics Letters  (Volume:24 ,  Issue: 2 )