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A novel CMOS Bandgap reference circuit with improved high-order temperature compensation

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3 Author(s)
Koudounas, S. ; ECE Dept., Univ. of Cyprus, Nicosia, Cyprus ; Andreou, C.M. ; Georgiou, J.

This paper proposes a new CMOS bandgap reference generator topology that allows a straightforward implementation of an exact curvature compensation method by using only poly-silicon resistors. This is achieved by using a second Opamp that generates a CTAT current, which is subsequently used to enhance the curvature compensation method. A superior theoretical performance than previously proposed architectures is achieved with respect to temperature sensitivity of the reference voltage. In nominal simulations, that was less than 0.lppm over a temperature range of -40 to 125 for a CMOS 0.35 μm technology. In practice, the proposed BGR is sensitive to device mismatch and thus resistor trimming is necessary if high performance is required.

Published in:

Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on

Date of Conference:

May 30 2010-June 2 2010