By Topic

Highly efficient selectively oxidized GaAs (/spl lambda/=830 nm) vertical-cavity lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Weigl, B. ; Dept. of Optelectron., Ulm Univ., Germany ; Reiner, G. ; Grabherr, M. ; Ebeling, K.J.

We have fabricated MBE grown, selectively oxidized multi-mode GaAs QW VCSELs with 730 /spl mu/A threshold, 8.5 mW output power and 40.3% conversion efficiency. Single-mode devices show 1.2 mW output power and better than 30 dB side mode suppression.

Published in:

Semiconductor Laser Conference, 1996., 15th IEEE International

Date of Conference:

13-18 Oct. 1996