Referenced Items are not available for this document.
We have fabricated MBE grown, selectively oxidized multi-mode GaAs QW VCSELs with 730 /spl mu/A threshold, 8.5 mW output power and 40.3% conversion efficiency. Single-mode devices show 1.2 mW output power and better than 30 dB side mode suppression.
Published in:
Semiconductor Laser Conference, 1996., 15th IEEE International
Date of Conference: 13-18 Oct. 1996
- Page(s):
- 81 - 82
- Meeting Date :
- 13 Oct 1996-18 Oct 1996
- Print ISBN:
- 0-7803-3163-X
- INSPEC Accession Number:
- 5565334
- Conference Location :
- Haifa, Israel
- Digital Object Identifier :
- 10.1109/ISLC.1996.553757
- Product Type:
- Conference Publications
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