Highly efficient selectively oxidized GaAs (/spl lambda/=830 nm) vertical-cavity lasers

We have fabricated MBE grown, selectively oxidized multi-mode GaAs QW VCSELs with 730 /spl mu/A threshold, 8.5 mW output power and 40.3% conversion efficiency. Single-mode devices show 1.2 mW output power and better than 30 dB side mode suppression.