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Ultra-low transparency current density of strained quantum well lasers by coupling with n-type /spl delta/-doped layer

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4 Author(s)
Buchinsky, O. ; Dept. of Phys., Technion-Israel Inst. of Technol., Haifa, Israel ; Blumin, M. ; Sarfaty, R. ; Fekete, D.

By using a combination of a single strained quantum well with a n-type /spl delta/-doped layer, the transparency current density of the laser was lowered. It was achieved without increasing the internal losses, in contrast with a uniformly doped active area.

Published in:

Semiconductor Laser Conference, 1996., 15th IEEE International

Date of Conference:

13-18 Oct. 1996