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Fabrication and electrical characteristics of memristors with TiO2/TiO2+x active layers

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3 Author(s)
Prodromakis, T. ; Inst. of Biomed. Eng., Imperial Coll. London, London, UK ; Michelakisy, K. ; Toumazou, C.

We report on the fabrication and electrical characterisation of memristors with TiO2/TiO2+x active layer. This active layer is deposited at room temperature with RF-sputtering and consists of two sub-layers, the top one of which contains excess oxygen atoms. Electrical characterisation of the devices demonstrates similar switching characteristics as previously reported for nano-scale memristors with TiO2/TiO2-x active cores.

Published in:

Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on

Date of Conference:

May 30 2010-June 2 2010

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