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A novel RFID tag chip with temperature sensor in standard CMOS process

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5 Author(s)
Qi Zhang ; State Key Lab. for Superlattices & Microstructures, Chinese Acad. of Sci., Beijing, China ; Peng Feng ; Shenghua Zhou ; Zhiqing Geng
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This paper presents a novel RFID tag chip with temperature sensor in 0.18μm standard CMOS process. It consists of four blocks: RF/analog front-end circuit, 192-bit non-volatile memory (NVM), temperature sensor and digital baseband circuit. A CMOS UHF rectifier with dynamic bias using switch capacitor is proposed to improve the efficiency of rectification, while avoiding using costly Schottky diodes. We design a 192-bit NVM in standard CMOS process based on FN tunneling phenomenon with extremely small current density. It dissipates only 1.8μW/3.6μW for reading/writing operation. A 0.8μW smart temperature sensor with ±1°C resolution without power hungry ADCs is achieved. As a result, the power consumption is 5.8μW, 6.8μW, and 8.6μW for reading sensor, reading NVM and writing NVM respectively. The chip core area is 0.6mm2 in 0.18μm CMOS process.

Published in:

Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on

Date of Conference:

May 30 2010-June 2 2010