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Formation and annihilation of Cu conductive filament in the nonpolar resistive switching Cu/ZrO2:Cu/Pt ReRAM

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4 Author(s)
Liu, Ming ; Lab. of Nano-Fabrication & Novel Device Integrated Technol., Chinese Acad. of Sci., Beijing, China ; Liu, Qi ; Long, Shibing ; Guan, Weihua

We report a ZrO2-based resistive memory composed of a thin Cu doped ZrO2 layer sandwiched between Pt bottom and Cu top electrode. The Cu/ZrO2:Cu/Pt shows excellent nonpolar resistive switching behaviors, such as free-electroforming, high ON/OFF resistance ratio (106), fast Set/Reset speed (50 ns/100 ns), and reliable data retention (>10 years). The temperature-dependent switching characteristics show that a metallic filamentary channel is responsible for the low resistance state. Further analysis reveals that the physical origin of this metallic filament is the nanoscale Cu conductive filament. On this basis, we propose that the set process and the reset process stem from the electrochemical reactions in the filament, in which a thermal effect is greatly involved.

Published in:

Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on

Date of Conference:

May 30 2010-June 2 2010