Cart (Loading....) | Create Account
Close category search window
 

Optical, electrical and structural properties of polycrystalline /spl beta/-FeSi2 thin films fabricated by electron beam evaporation of ferrosilicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)

Ferrosilicon (FeSi/sub 2/) grains (99.9%) were evaporated at room temperature onto a (100)-oriented n-type FZ Si substrate using electron beam deposition technique. Optical, electrical and structural properties were systematically investigated as a function of subsequent isochronal (2 hrs) annealing temperature (T/sub a/) in the range of 400/spl sim/950/spl deg/C. X-ray diffraction and Raman scattering analysis suggested the formation of polycrystalline /spl beta/-FeSi/sub 2/ above T/sub a/=500/spl deg/C, whereas above T/sub a/=800/spl deg/C, Si agglomeration was observed to form. The electrical resistivity of these samples reached a maximum (0.542 /spl Omega//spl middot/cm) at T/sub a/=700/spl deg/C, and then it decreased with increasing T/sub a/. Its decrease process was explained by considering the creation of Si vacancies, which could presumably be acting as holes. It is of great interest that in T/sub a/=600/spl sim/800/spl deg/C, the majority carrier converts from n- to p-type. Typical carrier concentrations and mobilities were determined to be /spl mu//sub n/=39.4 cm/sup 2//V/spl middot/sec, n/sub e/=6.59/spl times/10/sup 17/ cm/sup -3/ for n-type /spl beta/-FeSi/sub 2/ with T/sub a/=600/spl deg/C and /spl mu//sub h/=20.3 cm/sup 2//V/spl middot/sec, n/sub h/=2.22/spl times/10/sup 18/ cm/sup -3/ for p-type /spl beta/-FeSi/sub 2/ with T/sub a/=850/spl deg/C. Optical absorption measurements revealed that the nature of the bandgap varies from an indirect to direct one with increasing Ta.

Published in:

Thermoelectrics, 1996., Fifteenth International Conference on

Date of Conference:

26-29 March 1996

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.