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Temperature-Dependent RF Small-Signal and Noise Characteristics of SOI Dynamic Threshold Voltage MOSFETs

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8 Author(s)
Sheng-Chun Wang ; National Nano Device Laboratories, Hsinchu, Taiwan, R.O.C. ; Pin Su ; Kun-Ming Chen ; Kuo-Hsiang Liao
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In this paper, temperature-dependent RF small-signal and noise characteristics of silicon-on-insulator (SOI) dynamic threshold voltage (DT) MOSFETs are experimentally examined. In the low-voltage regime, both the cutoff and maximum oscillation frequencies (ft and fmax) tend to increase with temperature. In addition, the inherent body-related parasitics and the series resistance have much more impact on fmax than ft. Besides, we found that the noise stemmed from the body resistance (Rb) would contribute to the output noise current, and degrade the minimum noise figure (NFmin). Our study may provide insights for RF circuit design using advanced SOI DT MOSFETs.

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IEEE Transactions on Microwave Theory and Techniques  (Volume:58 ,  Issue: 9 )