Referenced Items are not available for this document.
The high on/off-current ratio of microcrystalline-silicon thin-film transistors (TFTs) with vertical offset was demonstrated. These TFTs have a bottom-gate structure and offset regions formed along the side surfaces of the thick interlayer films. Due to a decrease of maximum electric-field intensity and a narrow distribution of high electric field, the on/off current ratio of vertical-offset TFTs is about three orders of magnitude higher than that of conventional TFTs.
Published in:
Electron Device Letters, IEEE
(Volume:31
,
Issue:
9
)
Date of Publication: Sept. 2010
- Page(s):
- 975 - 977
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 11477405
- Digital Object Identifier :
- 10.1109/LED.2010.2055533
- Product Type:
- Journals & Magazines
- Date of Publication :
- 03 August 2010
- Date of Current Version :
- 23 August 2010
- Issue Date :
- Sept. 2010
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
