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High On/Off-Current Ratio in Bottom-Gated Microcrystalline-Silicon Thin-Film Transistors With Vertical-Offset Structure

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6 Author(s)
Yoshiaki Toyota ; Central Research Laboratory, Hitachi, Ltd., Tokyo, Japan ; Mieko Matsumura ; Isao Suzumura ; Takuo Kaitoh
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The high on/off-current ratio of microcrystalline-silicon thin-film transistors (TFTs) with vertical offset was demonstrated. These TFTs have a bottom-gate structure and offset regions formed along the side surfaces of the thick interlayer films. Due to a decrease of maximum electric-field intensity and a narrow distribution of high electric field, the on/off current ratio of vertical-offset TFTs is about three orders of magnitude higher than that of conventional TFTs.

Published in:

IEEE Electron Device Letters  (Volume:31 ,  Issue: 9 )