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Browse Journals & Magazines > Applied Physics Letters ...> Volume:97 Issue:4 Help

Monolithic n-type conductivity on low temperature grown freestanding ultrananocrystalline diamond films

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3 Author(s)
Joseph, P.T. ; Tai, N.H. ; Lin, I.N.

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We report monolithic n-type conductivity on low-temperature (<570 °C) grown ultrananocrystalline diamond (UNCD) films by Li-diffusion (about 255 nm) from LiNbO3 substrates. Low resistivity of 1.2 Ω cm with carrier concentration of -2×1020 cm-3 is obtained on freestanding UNCD films. The films bonded to Cu-tape show very low turn-on field of 4.2 V/μm with emission current density of above 0.3 mA/cm2 at a low applied filed of 10 V/μm. The n-type conductivity of low-temperature Li-diffused UNCD films overwhelms that of the high-temperature (≥800 °C) nitrogen doped ones and will make a significant impact to diamond-based electronics.

Published in:
Applied Physics Letters  (Volume:97 ,  Issue: 4 )

Date of Publication: Jul 2010

Page(s):
042107 - 042107-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3472204
Product Type:
Journals & Magazines
Date of Current Version :
03 August 2010
Issue Date :
Jul 2010

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