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Influence of oxidation rate and post-metallization annealing on distributions of deep interface traps in 4H-n-SiC∶SiO2

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1 Author(s)
Gutt, T. ; Inst. of Electron Technol., Warsaw, Poland

The dependence of mid-gap and border trap content in SiO2:Si interfaces on oxidation rate in thermally oxidized n-type 4H-SiC was studied using a modified C-V hysteresis method. The minimum deep trap content oxidation conditions where found. It was also shown that the process of post metallization annealing further decreased the density of slow-switching traps in all cases.

Published in:

MIPRO, 2010 Proceedings of the 33rd International Convention

Date of Conference:

24-28 May 2010