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The dependence of mid-gap and border trap content in SiO2:Si interfaces on oxidation rate in thermally oxidized n-type 4H-SiC was studied using a modified C-V hysteresis method. The minimum deep trap content oxidation conditions where found. It was also shown that the process of post metallization annealing further decreased the density of slow-switching traps in all cases.
Date of Conference: 24-28 May 2010