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Plasma immersion ion implantation with dielectric substrates

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2 Author(s)
Linder, B.P. ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; Cheung, Nathan W.

Plasma immersion ion implantation (PIII) is a novel implantation technique for high-dose/high-current implants. Using the SPICE circuit simulator to model the PIII process, the sheath voltage and ion energy distribution are examined. Implanting into a dielectric substrate results in a significant voltage buildup in the wafer, reducing the effective implant energy. Increasing the pulse voltage raises the dose/pulse, but at the cost of an expanded implant energy spread. Increasing the plasma ion density also raises the dose/pulse, but at the cost of a wider implant energy spread and a lower coupling efficiency. Increasing the substrate thickness reduces both the coupling efficiency and dose/pulse while broadening the energy spread. The large voltage generated across the dielectric substrate decreases the charge neutralization time significantly, reducing the possibility of gate oxide damage

Published in:

Plasma Science, IEEE Transactions on  (Volume:24 ,  Issue: 6 )