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20.8 Gb/s GaAs LSI self-routing switch for ATM switching systems

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4 Author(s)
Yamada, H. ; Oki Electr. Ind. Co. Ltd., Tokyo, Japan ; Tsunotani, M. ; Kaneyama, F. ; Seki, S.

An 8×8 self-routing hardware switch providing 20.8 Gb/s throughput has been developed for asynchronous transfer mode (ATM) switching systems. The basic architecture of this switch is a Batcher-Banyan network. A new mechanism for data processing and distributing high-speed signals is proposed. This switching system consists of three LSIs using a 0.5-μm gate GaAs MESFET technology. These LSIs are a switching network LSI for exchanging packet cells with eight cell channels, a negotiation network for screening of cells destined for the same output port, and a demultiplexer LSI for converting the cell streams from the switching network LSI to the eight streams per channel. These LSIs are mounted in a 520-pin multichip module package. The total number of logic gates is 13.3 k, and the power dissipation is 24 W. The switching system fully operates at a data rate of 2.6 Gb/s, and its throughput is 20.8 Gb/s

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Solid-State Circuits, IEEE Journal of  (Volume:32 ,  Issue: 1 )